WebSpecifications of IRF1404 MOSFET. Type: n-channel; Drain-to-Source Breakdown Voltage: 40 V; ... Power Dissipation: 200 W; Package: TO-220AB; Pinout of IRF1404. Replacement and Equivalent of IRF1404 Transistor. You can replace the IRF1404 with the ... WebFind IRF1404 on Octopart: the fastest source for datasheets, pricing, specs and availability.
Irf 1404 PDF Field Effect Transistor Mosfet - Scribd
WebPulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA-62 Case-to-Sink, Flat, Greased Surface RthCS0.50 - °C/W Maximum Junction-to-Case (Drain) RthJC-1.0 SPECIFICATIONS (TJ= 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. … WebIRF1404 datasheet, IRF1404 pdf, IRF1404 data sheet, datasheet, data sheet, pdf Home All manufacturers By Category FR: DE: ES: IT: PT: RU: Part name, description or manufacturer contain: Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA. in and out hotel guatemala
IRF1404 MOSFET complementary, equivalent, replacement, pinout, …
WebApr 11, 2024 · Description: MOSFET MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB Lifecycle: Obsolete Datasheet: IRF1404 Datasheet (PDF) Compare Product Add To … WebIRF1404 HEXFET® Power MOSFET Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and … WebMURF1660CTG www.onsemi.com 2 THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case R JC 3.0 °C/W Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds TL 260 °C ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit inbound contact centre services